Intel and Saimemory Partner to Advance Z-Angle Memory for AI and High-Performance Computing
Intel and Saimemory, a subsidiary of SoftBank, have announced a strategic collaboration to develop and commercialize Z-Angle Memory (ZAM) technology. This innovative memory architecture is designed to address the growing demands of artificial intelligence (AI) and high-performance computing (HPC) by delivering greater memory capacity and bandwidth while reducing power consumption.
What Is Z-Angle Memory?
Z-Angle Memory, or ZAM, is a next-generation stacked DRAM solution that aims to surpass the capabilities of current high-bandwidth memory (HBM) technologies. The "Z-Angle" name highlights the use of vertical (Z-axis) stacking, which enables more memory layers to be integrated within a single package. This approach is expected to significantly boost both memory density and data throughput, making it particularly well-suited for data-intensive AI and HPC workloads.
Building on Advanced Memory Research
The ZAM project leverages Intel’s Next Generation DRAM Bonding (NGDB) technology, which was developed as part of the U.S. government-backed Advanced Memory Technology (AMT) program. This initiative involved collaboration with leading national laboratories, including Sandia, Lawrence Livermore, and Los Alamos. In January, Sandia National Laboratories reported successful demonstrations of NGDB prototypes featuring eight vertically stacked DRAM layers, confirming the viability of this advanced bonding and stacking technique.
Performance and Efficiency Targets
According to industry reports, Saimemory is aiming for ZAM to deliver two to three times the memory capacity of today’s HBM solutions, while reducing power consumption by 40-50%. These improvements are expected to come without a significant increase in cost, making ZAM a competitive option for next-generation computing systems. SoftBank is supporting the development with an investment of approximately ¥3 billion through the prototype phase.
Roadmap and Industry Impact
Saimemory plans to have ZAM prototypes available by early 2028, with commercial products anticipated in 2029. For Intel, this partnership marks a significant return to the forefront of advanced memory technology, decades after its exit from the DRAM market. The collaboration is poised to set new standards in memory performance and efficiency, supporting the rapid evolution of AI and high-performance computing applications.
