Intel and SoftBank Unveil HB3DM: A Next-Generation High-Bandwidth Memory Solution for AI
Intel and SoftBank, through their subsidiary Saimemory, are advancing the future of high-bandwidth memory (HBM) with the introduction of HB3DM, a new memory technology designed to meet the growing demands of AI accelerators. This innovative solution aims to deliver greater bandwidth and capacity for memory modules, addressing the limitations of current HBM standards.
Introducing HB3DM and Z-Angle Memory Technology
At the upcoming VLSI 2026 conference, Saimemory is set to present a detailed paper on HB3DM, which is built on Z-Angle Memory (ZAM) technology. ZAM refers to the vertical stacking of memory dies along the Z-axis, a technique reminiscent of traditional HBM architectures. However, HB3DM leverages advanced manufacturing processes to push performance boundaries even further.
The first generation of HB3DM features a nine-layer stack, assembled using a hybrid bonding technique for precise 3D chip integration. At the foundation lies a logic layer responsible for managing data flow within the chip, topped by eight DRAM layers dedicated to data storage. Each layer incorporates approximately 13,700 through-silicon vias (TSVs), enabling efficient hybrid bonding and high-speed data transfer.
Performance and Bandwidth Advantages
HB3DM is engineered to deliver exceptional memory bandwidth and capacity. Each layer provides around 1.125 GB, resulting in a total of 10 GB per memory module. With a bandwidth density of approximately 0.25 terabits per second (Tb/s) per square millimeter, a 10 GB module with a 171 mm² die area can achieve an impressive 5.3 terabytes per second (TB/s) of bandwidth.
These performance metrics position HB3DM as a potential leader in the high-bandwidth memory market. For comparison, the upcoming HBM4 standard offers speeds of about 2 TB/s per stack, less than half the bandwidth of HB3DM. While HB3DM currently offers a maximum capacity of 10 GB per module—compared to HBM4’s 48 GB per stack—future iterations may increase the number of layers to boost capacity further.
Manufacturing and Industry Impact
Details regarding the commercial launch of HB3DM and the manufacturer of its DRAM components remain undisclosed. However, Intel’s involvement suggests the possibility of a return to DRAM production within Intel’s own fabrication facilities, though the specific process node has yet to be revealed.
As the VLSI 2026 conference approaches, the industry anticipates further updates from Intel, SoftBank, and Saimemory on the development and commercialization of HB3DM. This breakthrough in high-bandwidth memory technology could play a pivotal role in powering next-generation AI accelerators and data-intensive applications.
