Kioxia and Sandisk Introduce Industry-Leading 10th-Generation QLC 3D Flash Memory

Kioxia Corporation, in collaboration with Sandisk Corporation, has announced the launch of their next-generation Quad-Level-Cell (QLC) 3D flash memory technology. This breakthrough sets a new standard in the storage industry, delivering up to a 60% increase in bit density compared to previous generations and surpassing 37 Gb/mm². The new technology establishes benchmarks for bit density, performance, and power efficiency, addressing the evolving needs of data-intensive applications such as artificial intelligence (AI) and cloud computing.

Advanced CMOS Directly Bonded to Array (CBA) Technology

The latest QLC 3D flash memory leverages an innovative CMOS Directly Bonded to Array (CBA) architecture. This approach involves fabricating CMOS logic and the memory array on separate wafers, which are then precisely aligned and bonded together. The result is a significant improvement in read and write bandwidth over the previous 8th-generation 3D flash memory, making this the first QLC 3D flash memory to achieve a 4.8 Gb/s interface. Enhanced interface capabilities also contribute to improved I/O data-out transfer power efficiency, directly addressing the power and cooling demands of modern AI and cloud infrastructure.

Meeting the Demands of AI and Cloud Infrastructure

As AI technologies continue to advance and diversify, the need for efficient, high-capacity storage solutions has never been greater. The new QLC technology is designed to support the rapid growth of data generated by AI training, inference, and hyperscale datacenter workloads. By increasing storage density and optimizing power efficiency, this technology provides a scalable foundation for next-generation infrastructure applications.

Key Features of 10th-Generation QLC 3D Flash Memory

  • 332-layer architecture: Optimized floorplan design delivers up to 60% higher bit density, achieving over 37 Gb/mm² compared to the 8th-generation.
  • 4.8 Gb/s NAND interface: Enabled by Toggle DDR6.0 and the Separate Command Address (SCA) protocol, unlocking the full potential of high-speed data transfer.
  • CMOS Directly Bonded to Array (CBA): Enhances density scaling, performance, and manufacturing efficiency.
  • Power-Isolated Low-Tapped Termination (PI-LTT): Improves I/O data-out transfer power efficiency, supporting energy-efficient operations in demanding environments.

With these advancements, Kioxia and Sandisk are redefining the capabilities of QLC NAND technology, paving the way for more efficient, high-capacity flash storage solutions tailored to the needs of AI, cloud, and next-generation data infrastructure.